Selected papers published before 2000
Strongly Anisotropic Band Dispersion of an Image State Located Above Metallic Nanowires
I.G. Hill and A.B. McLean, Phys. Rev. Lett., 82, 10, 2155-58, 1999.
Abstract
Indium can be grown on Si(111) in a 4x1 pattern that contains rows of In atoms spaced 13.3 A apart that have quasi-1D electronic structure. This ordered array of metallic wires produces an image-induced surface state series. We have measured the dispersion of the most tightly bound (n=1) image state band and found it to be unconventional because it falls below the free electron parabola perpendicular to the In atom rows. The most straightforward explanation for this is that the electron feels the surface corrugation potential produced by the rows of In atoms. We were able to infer the form of the potential from our measuremts.ents.
Detection of a Fermi level crossing in three domain Si(111)-In(4x1)
I.G. Hill and A.B. McLean, Phys. Rev. B, 59, 9791-3, 1999.
Abstract
Using photoemission and inverse photoemission, it has recently been demonstrated that single domain Si(111)-In(4x1) overlayers possess a clear Fermi level crossing at approx 0.6 Gamma X. However, a previous inverse photoemission study, that was performed on a three domain sample, concluded that the overlayer was semiconducting. In an attempt to reconcile the results of the two inverse photoemission studies we proposed, in an earlier paper, that the first study did not probe the region of reciprocal space where the Fermi level crossing is now known to occur. In this paper we demonstrate that this suggestion is correct. Using a three domain Si(111)-In(4x1) overlayer, we mapped along the Gamma K azimuth of the 1x1 zone, which is coincident with the Gamma X azimuth of the 4x1 zone, with inverse photoemission, and found a Fermi level crossing at $\approx 0.6 Gamma X. We have now detected Fermi level crossings in both single and three domain 4x1 overlayers.
Metallicity of In chains on Si(111)
I.G. Hill and A.B. McLean; Phys. Rev. B, 56, 24, 15725-28, 1997.
Abstract
The electronic structure of the Si(111)-In(4x1) system, between the Fermi level and the vacuum level, has been studied using inverse photoemission. Single domain 4$\times$1 overlayers were grown on vicinal Si(111) surfaces which were offcut by 3 deg. towards [bar 1 bar 1 2]. In contrast to an earlier inverse photoemission study of this system, which was performed on a multi-domain sample, but in agreement with recent photoemission and STM studies, the overlayer system was found to be metallic. A clear Fermi level crossing was detected near the Brillouin zone boundary at bar X. We suggest a possible re-interpretation of the inverse photoemission study that naturally resolves the controversy about the surface metallicity.
A comparison of two high performance inverse photoemission detectors
I.G. Hill and A.B. McLean, Review of Scientific Instruments, 69, 1, 261-64, 1998.
Abstract
By performing inverse photoemission experiments on the same sample at the same time with two different detectors, their performance has been directly compared. The first detector is based on one of the most promising solid-state detector designs. It is comprised of a focused mesh electron multiplier and a CaF_2 window. The second detector is a Geiger-Muller tube which uses dimethyl ether and a MgF_2 window. Although it has already been demonstrated that detectors based on this design work, the dimethyl ether Geiger-Muller tubes are not widely used, and we show that it is essential to compensate for detector dead time effects for the detector to be practically useful. Once this is done, the dimethyl ether Geiger-Muller tube has a sensitivity that is approximately 20 times greater than that of the solid state detector. Furthermore, it is easy to operate and it does not appear to suffer from the problems that are normally associated with iodine Geiger-Muller detectors.
Inverse photoemission studies of two quasi-one-dimensional overlayer systems
I.G. Hill and A.B. McLean, Applied Surface Science, 123/124, 371-75 (1998).
Abstract
Photoemission studies of Au chains on Si(111) surfaces, Si(111)-Au(5x2), have identified a 'metallic' surface band parallel to the chains. The signature of the metallic nature is strong emission intensity at the Fermi level. In contrast, it has recently been established that bulk quasi-one-dimensional systems have vanishing emission intensity at the Fermi level. To further our understanding of these low dimensional systems, we have studied Si(111)-Au(5x2) and Si(111)-In(4x1), which is also quasi-one-dimensional, with inverse photoemission.
The role of Si adatoms in the Si(111)-Au(5x2) quasi-one-dimensional system
I.G. Hill and A.B. McLean, Phys. Rev. B, 55, 23, 15664-668, 1997.
Scanning Tunneling Microscopy Study of InP(100)-(2x4): An Exception of the Dimer Model
C.D. MacPherson, R.A. Wolkow, C.E.J. Mitchell and A.B. McLean, Phys. Rev. Lett., 77, 4, 691-694 (1996).
Abtract
Structural and Electronic Properties of Sulfur Passivated InP(100)
C.E.J. Mitchell, I.G. Hill, A.B. McLean and Z.H. Lu, Progress in Surface Science, 50, Nos 1-4, pp325-334 (1995).
Abstract
InP(100) surfaces were passivated with S using a wet chemical treatment. The structural properties of the passivated surface were studied with low-energy electron diffraction. In agreement with previous studies, a 1 x 1 pattern was observed for the as-passivated surface, while a 2 x 1 reconstruction was found for surfaces annealed at temperatures in the range 350^oC - 500^oC. Photoemission and inverse photoemission were used to examine the electronic properties of the surface. The sulfur treatment was found to remove both occupied and unoccupied states from the vicinity of the fundamental gap. The surface bandgap at the zone centre, Gamma, on the passivated surface was measured to be 5.1 eV, as compared to 2.5 eV for the clean, sputter/annealed 2 x 4 surface. No partially filled bands were observed crossing the Fermi level.
Implementation of an efficient analytical approximation to the Voigt function for photoemission lineshape analysis
A.B. McLean, C.E.J. Mitchell and D.M. Swanston, Journal of Electron Spectroscopy, 69, 125-132 (1994).
- Journal of Electron Spectroscopy
- Preprint.pdf
- ASCI version of C code used to generate the Voigt function.
Surface localized states on InAs(110)
D.M. Swanston, A.B. McLean, D.N. McIlroy, D. Heskett, R. Ludeke, H. Munekata, M. Prietsch and N.J. DiNardo, Surface Science, 312, 361-368 (1994).
Bravais Lattices, Surface Nets, and Buckminsterfullerenes
C.E.J. Mitchell and A.B. McLean, The Mathematica Journal, Volume 3, Issue 3, Summer 1993.
Layer-by-layer electronic structure at semiconductor-metal interfaces: band gap and magnetism
F.J. Himpsel, W. Drube, A.B. McLean and A. Santoni, Applied Surface Science, 56-58, 160-168, 1992.
The polarization dependence of Bi-induced surface states on GaAs(110)
A.B. McLean, R. Ludeke, M. Prietch, D. Heskett, D. Tang and T. Maeda Wong, J. Vac. Sci. Technol. 9, 3, 1836-39, 1991.
Two-dimensional electronic structure of the GaAs(110)-Bi system
A.B. McLean, R. Ludeke, M. Prietsch, D. Heskett, D. Tang and T. Maeda Wong, Phys. Rev. B, 43, 7243, 1991.
Fine structure of the Ca 2p x-ray-absorption edge for bulk compounds, surfaces and interfaces
F.J. Himpsel, U.O. Karlsson, A.B. McLean, L.J. Terminello, F.M.F. de Groot, M. Abbate, J.C. Fuggle, J.A. Yarmoff, B.T. Thole and G.A. Sawatzky, Phys. Rev. B, 43, 6899-6907, 1991.
Transition metal-GaP(110) interfaces: The roles of impurity states and metallicity
R. Ludeke, M. Prietsch, A.B. McLean and A. Santoni, J. Vac. Sci. Technol. B, 8, 4, 964-73, 1990.
Electronic Properties of the Nascent GaP(110)-Noble Metal Interfaces
R. Ludeke, A.B. McLean and A. Taleb-Ibrahimi, Phys. Rev. B, 42, 2982, 1990.
Core-level photoemission investigation of atomic-fluorine adsorption on GaAs(110)
A.B. McLean, L.J. Terminello and F.R. McFeely, Phys. Rev. B, 40, 11778-85, 1989.
Electronic structure of Si(111)-B(rt 3 x rt3)R30 studied by Si 2p and B 1s core-level photoelectron spectroscopy
A.B. McLean, L.J. Terminello and F.J. Himpsel, Phys. Rev. B, 41, 7694-700, 1990.
Surface core-level shifts for the (110) cleavage face of III-V semiconductors: InAs(110)
A.B. McLean, J. Phys. Condens. Matter, 2, 1027-32, 1990.
Structural and electronic properties of Bi/GaAs(110)
R. Ludeke, A. Taleb-Ibrahimi, R.M. Feenstra and A.B. McLean, J. Vac. Sci. Technol. B, 7, 4, 936-944 (1989).
Resonant inverse-photoemission study of layer-dependent surface states at the epitaxial GaAs(110)-Bi interface
A.B. McLean and F.J. Himpsel, Phys. Rev. B, 40, 12, 8425-30, 1989.
Constant final state measurements of surface core-level binding energy shifts: InP(110) and GaAs(110)
A.B. McLean, Surface Science, 220, L671-L678, 1989.
Orientation of the O 2p holes in Bi2Sr2Ca1Cu2O8
F.J. Himpsel, G.V. Chandrashekhar, A.B. McLean and M.W. Shafer, Phys. Rev. B, 38, 16, 11946-11948, 1988.
Bonding at silicon/insulator interfaces
F.J. Himpsel, T.F. Heinz, A.B. McLean and E. Palange, Applied Surface Science, 41/42, 346-351, 1989.
Electronic and structural properties of a discommensurate monolayer system: GaAs(110)-(1x1)Bi
A.B. McLean, R.M. Feenstra, A. Taleb-Ibrahimi and R. Ludeke, Phys. Rev. B, 39, 12925-28, 1989.
Two-dimensional energy bands at the CaF2/Si(111) interface
F.J. Himpsel, T.F. Heinz, A.B. McLean, E. Palange and E. Burstein, J. Vac. Sci. Technol. B, 7, 4, 879-81, 1989.
Surface core-level binding energy shifts for the cleaved GaP(110) surface
A.B. McLean and R. Ludeke, Phys. Rev. B, 39, 9, 6223-26, 1989.
Band dispersion of an interface state: CaF2/Si(111)
A.B. McLean and F.J. Himpsel, Phys. Rev. B, 39, 2, 1457-60, 1989.
Metal d-level induced mid-gap Fermi level pining on GaAs(110)
A.B. McLean, R.H. Williams and J.F. McGilp, J. Vac. Sci. Technol., 6, 4, 1252-56, 1988.
Metal d-level induced mid-gap Fermi level pinning on GaAs(110)
A. B. McLean, R.H. Williams and J.F. McGilp, Solid State Communications, 65, 11, 1415-1418, 1988.
Schottky contacts to cleaved GaAs(110) surfaces:II. Thermodynamic aspects
J.F. McGilp and A.B. McLean, J. Phys. C, 21, 807-818, 1988.
Schottky contacts to cleaved GaAs(110) surfaces: I. Electrical properties and microscopic theories
A.B. McLean and R.H. Williams, J. Phys. C, 21, 783-806, 1988.
Schottky barrier height determination in the presence of interfacial disorder
A.B. McLean, I.M. Dharmadasa and R.H. Williams, Semicond. Sci. Technol. 1, 137-42, 1986.
A study of conduction electron scattering in magnetic metals by microcontact spectroscopy
A.B. McLean and G.G. Lonzarich, J.Phys.C: Solid State Phys. 20, 4855-4871, 1987.
Microcontact spectroscopy in praseodymium
A.B. McLean and G.G. Lonzarich, J.Phys.F: Met. Phys. 14, L185-L190, 1984.